| 1. Identity statement | |
| Reference Type | Journal Article |
| Site | mtc-m16.sid.inpe.br |
| Holder Code | isadg {BR SPINPE} ibi 8JMKD3MGPCW/3DT298S |
| Identifier | 6qtX3pFwXQZGivnJVY/Mc9iC |
| Repository | sid.inpe.br/mtc-m16@80/2006/08.18.18.28 (restricted access) |
| Last Update | 2006:08.18.18.28.20 (UTC) marciana |
| Metadata Repository | sid.inpe.br/mtc-m16@80/2006/08.18.18.28.22 |
| Metadata Last Update | 2018:06.05.01.17.04 (UTC) administrator |
| Secondary Key | INPE-14066--PRE/9235 |
| ISSN | 0093-3813 |
| Citation Key | UedaReuBelKurAbr:2006:AnEfSi |
| Title | Annealing Effects on Silicon Oxynitride Layer Synthesized by N Plasma Immersion Ion Implantation  |
| Year | 2006 |
| Month | Aug. |
| Access Date | 2024, May 19 |
| Secondary Type | PRE PI |
| Number of Files | 1 |
| Size | 287 KiB |
| 2. Context | |
| Author | 1 Ueda, Mário 2 Reuther, Helfried 3 Beloto, Antonio Fernando 4 Kuranaga, Carlos 5 Abramof, Eduardo |
| Resume Identifier | 1 8JMKD3MGP5W/3C9JHSB 2 3 8JMKD3MGP5W/3C9JGJ8 4 5 8JMKD3MGP5W/3C9JGUH |
| Group | 1 LAP-INPE-MCT-BR 2 3 LAS-INPE-MCT-BR 4 LAS-INPE-MCT-BR 5 LAS-INPE-MCT-BR |
| Affiliation | 1 Instituto Nacional de Pesquisas Espaciais, Laboratório Associado de Plasma (INPE.LAP) 2 Institute of Iom Beam Physics and Materials Research 3 Instituto Nacional de Pesquisas Espaciais, Laboratório Associado de Sensores e Materiais (INPE.LAS) 4 Instituto Nacional de Pesquisas Espaciais, Laboratório Associado de Sensores e Materiais (INPE.LAS) 5 Instituto Nacional de Pesquisas Espaciais, Laboratório Associado de Sensores e Materiais (INPE.LAS) |
| Journal | IEEE Transactions on Plasma Science |
| Volume | 34 |
| Number | 4 part 1 |
| Pages | 1080-1083 |
| History (UTC) | 2006-08-18 18:28:22 :: simone -> administrator :: 2014-04-16 17:25:23 :: administrator -> marciana :: 2006 2014-08-20 19:08:19 :: marciana -> administrator :: 2006 2018-06-05 01:17:04 :: administrator -> marciana :: 2006 |
| 3. Content and structure | |
| Is the master or a copy? | is the master |
| Content Stage | completed |
| Transferable | 1 |
| Content Type | External Contribution |
| Version Type | publisher |
| Keywords | Annealing plasma immersion ion implantation (PIII) silicon oxynitride (SiOxNy) X-ray diffraction (XRD) |
| Abstract | A silicon oxynitride layer was obtained on a polished silicon wafer surface by nitrogen plasma immersion ion implantation. Oxygen is provided by the residual gas in the implantation chamber (base pressure of 3 × 10-5 mbar) and is also implanted as the main impurity. As-implanted Si samples were analyzed by high-resolution Auger electron spectroscopy (AES), which indicated the formation of a SiOxNy layer of about 30 nm with varying x and y, along the depth of the treatment layer. AES also provided concentration profiles of the implanted elements at the as-implanted stage. Annealing of samples from a batch of such oxynitrided Si samples was carried out at different temperatures ranging from 200ºC to 1060ºC. The AES analysis of these annealed samples indicated a significant escape of the implanted nitrogen atoms (starting already at 200ºC), but even at 1060ºC, there was a very thin (about 12 nm) remaining layer of the silicon oxynitride, which is probably in crystalline form. Results from high-resolution X-ray diffraction measurements also corroborate the aforementioned results. |
| Area | FISPLASMA |
| Arrangement 1 | urlib.net > BDMCI > Fonds > Produção anterior à 2021 > LABAS > Annealing Effects on... |
| Arrangement 2 | urlib.net > BDMCI > Fonds > Produção anterior à 2021 > LABAP > Annealing Effects on... |
| doc Directory Content | access |
| source Directory Content | there are no files |
| agreement Directory Content | there are no files |
| 4. Conditions of access and use | |
| Language | en |
| Target File | Annealing effects on silicon oxynitride.pdf |
| User Group | administrator marciana simone |
| Reader Group | administrator marciana |
| Visibility | shown |
| Copy Holder | SID/SCD |
| Archiving Policy | denypublisher allowfinaldraft |
| Read Permission | deny from all and allow from 150.163 |
| Update Permission | not transferred |
| 5. Allied materials | |
| Next Higher Units | 8JMKD3MGPCW/3ESR3H2 8JMKD3MGPCW/3ET2RFS |
| Citing Item List | sid.inpe.br/mtc-m21/2012/07.13.14.56.06 1 sid.inpe.br/bibdigital/2013/09.24.19.30 1 sid.inpe.br/bibdigital/2013/09.25.21.49 1 |
| Dissemination | WEBSCI; PORTALCAPES; COMPENDEX; IEEEXplore. |
| Host Collection | sid.inpe.br/banon/2003/08.15.17.40 |
| 6. Notes | |
| Empty Fields | alternatejournal archivist callnumber copyright creatorhistory descriptionlevel doi e-mailaddress electronicmailaddress format isbn label lineage mark mirrorrepository nextedition notes orcid parameterlist parentrepositories previousedition previouslowerunit progress project rightsholder schedulinginformation secondarydate secondarymark session shorttitle sponsor subject tertiarymark tertiarytype typeofwork url |
| 7. Description control | |
| e-Mail (login) | marciana |
| update | |